IndiumV3, Main, Repository, bibRecord, 002615

Resonant photoemission shake-up satellites from semiconductors with shallow 3d and 4d core levels : Semiconductor Surfaces and Interfaces in Materials Science

Identifieur interne : 002615 ( Main/Repository ); précédent : 002614; suivant : 002616

Resonant photoemission shake-up satellites from semiconductors with shallow 3d and 4d core levels : Semiconductor Surfaces and Interfaces in Materials Science

Auteurs : RBID : Pascal:11-0154383

Descripteurs français

Pascal (Inist)
- Spectre photoélectron, Niveau coeur, Dopage, Rayonnement synchrotron, Corrélation électronique, Niveau peu profond, Semiconducteur, Tellurure de zinc, Séléniure de zinc, Tellurure de cadmium, Sulfure de cadmium, Oxyde d'indium, ZnTe, ZnSe, CdTe, CdS, In2O3.
Wicri :
- concept : Dopage.

English descriptors

KwdEn :
- Cadmium sulfide, Cadmium tellurides, Core levels, Doping, Electron correlations, Indium oxide, Photoelectron spectra, Semiconductor materials, Shallow level, Synchrotron radiation, Zinc selenides, Zinc tellurides.

Abstract

Photoemission spectra from shallow 3d and 4d levels of ZnTe, ZnSe; CdTe, CdS, and tin-doped In₂O₃ (ITO) using synchrotron radiation from the BESSY II storage ring are presented. All compounds show pronounced resonant shake-up satellites at the excitation threshold of the 3p and 4p-levels. The resonance intensity profiles are compared to 3p and 4p photoemission. Electron correlation energies U of 10.15, 10.75, 6.15, and 7.3 eV are derived for ZnTe, ZnSe, CdTe, and ITO, respectively.

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Pascal:11-0154383

Le document en format XML

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<author><name sortKey="Klein, Andreas" uniqKey="Klein A">Andreas Klein</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Technische Universität Darmstadt, Fachbereich Material- und Geowissenschaften, Fachgebiet Oberflächenforschung, Petersenstrasse 32</s1>
<s2>64287 Darmstadt</s2>
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<author><name sortKey="Siepchen, Bastian" uniqKey="Siepchen B">Bastian Siepchen</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Technische Universität Darmstadt, Fachbereich Material- und Geowissenschaften, Fachgebiet Oberflächenforschung, Petersenstrasse 32</s1>
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<author><name sortKey="Sp Th, Bettina" uniqKey="Sp Th B">Bettina Sp Th</name>
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<author><name sortKey="Mankel, Eric" uniqKey="Mankel E">Eric Mankel</name>
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<author><name sortKey="Jaegermann, Wolfram" uniqKey="Jaegermann W">Wolfram Jaegermann</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Technische Universität Darmstadt, Fachbereich Material- und Geowissenschaften, Fachgebiet Oberflächenforschung, Petersenstrasse 32</s1>
<s2>64287 Darmstadt</s2>
<s3>DEU</s3>
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<date when="2011">2011</date>
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<term>Cadmium tellurides</term>
<term>Core levels</term>
<term>Doping</term>
<term>Electron correlations</term>
<term>Indium oxide</term>
<term>Photoelectron spectra</term>
<term>Semiconductor materials</term>
<term>Shallow level</term>
<term>Synchrotron radiation</term>
<term>Zinc selenides</term>
<term>Zinc tellurides</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Spectre photoélectron</term>
<term>Niveau coeur</term>
<term>Dopage</term>
<term>Rayonnement synchrotron</term>
<term>Corrélation électronique</term>
<term>Niveau peu profond</term>
<term>Semiconducteur</term>
<term>Tellurure de zinc</term>
<term>Séléniure de zinc</term>
<term>Tellurure de cadmium</term>
<term>Sulfure de cadmium</term>
<term>Oxyde d'indium</term>
<term>ZnTe</term>
<term>ZnSe</term>
<term>CdTe</term>
<term>CdS</term>
<term>In2O3</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term>
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<front><div type="abstract" xml:lang="en">Photoemission spectra from shallow 3d and 4d levels of ZnTe, ZnSe; CdTe, CdS, and tin-doped In<sub>2</sub>
O<sub>3</sub>
 (ITO) using synchrotron radiation from the BESSY II storage ring are presented. All compounds show pronounced resonant shake-up satellites at the excitation threshold of the 3p and 4p-levels. The resonance intensity profiles are compared to 3p and 4p photoemission. Electron correlation energies U of 10.15, 10.75, 6.15, and 7.3 eV are derived for ZnTe, ZnSe, CdTe, and ITO, respectively.</div>
</front>
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<fA11 i1="06" i2="1"><s1>JAEGERMANN (Wolfram)</s1>
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<fA14 i1="01"><s1>Technische Universität Darmstadt, Fachbereich Material- und Geowissenschaften, Fachgebiet Oberflächenforschung, Petersenstrasse 32</s1>
<s2>64287 Darmstadt</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>Photoemission spectra from shallow 3d and 4d levels of ZnTe, ZnSe; CdTe, CdS, and tin-doped In<sub>2</sub>
O<sub>3</sub>
 (ITO) using synchrotron radiation from the BESSY II storage ring are presented. All compounds show pronounced resonant shake-up satellites at the excitation threshold of the 3p and 4p-levels. The resonance intensity profiles are compared to 3p and 4p photoemission. Electron correlation energies U of 10.15, 10.75, 6.15, and 7.3 eV are derived for ZnTe, ZnSe, CdTe, and ITO, respectively.</s0>
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<s5>04</s5>
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<s5>04</s5>
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<s5>19</s5>
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<s4>INC</s4>
<s5>54</s5>
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<fC03 i1="15" i2="3" l="FRE"><s0>CdTe</s0>
<s4>INC</s4>
<s5>55</s5>
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<fC03 i1="16" i2="3" l="FRE"><s0>CdS</s0>
<s4>INC</s4>
<s5>92</s5>
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<fC03 i1="17" i2="3" l="FRE"><s0>In2O3</s0>
<s4>INC</s4>
<s5>93</s5>
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<fN21><s1>101</s1>
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Resonant photoemission shake-up satellites from semiconductors with shallow 3d and 4d core levels : Semiconductor Surfaces and Interfaces in Materials Science

Resonant photoemission shake-up satellites from semiconductors with shallow 3d and 4d core levels : Semiconductor Surfaces and Interfaces in Materials Science

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri